<^e,ml-l.onailctoi , line. 20 stern ave. springfield, new jersey 07081 u.s.a. IRF510, sjhf510 telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 product summary vds(v) ^dsion) (n) qg (max.) (nc) qgs (nc) qgd(nc) configuration 100 vgs = 10v 0.54 8.3 2.3 3.8 single features ? dynamic dv/dt rating ? repetitive avalanche rated ? 175 c operating temperature ? fast switching ? ease of paralleling ? simple drive requirements to-220ab n-channel mosfet the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance throughout the industry. ordering information package lead (pb)-free snpb to-220ab IRF510pbf sihf510-e3 IRF510 sihf510 absolute maximum ratings (tc = 25 c, unless otherwise noted) parameter drain-source voltage gate-source voltage continuous drain current v at 10v tc = 25c v^s ai i u v ic=ioo o pulsed drain current3 linear derating factor single pulse avalanche energyb repetitive avalanche current3 repetitive avalanche energy3 maximum power dissipation tc = 25 c peak diode recovery dv/dtc operating junction and storage temperature range soldering recommendations (peak temperature) mounting torque for 10s 6-32 or m3 screw symbol vds vgs id i dm eas iar ear pd dv/dt tj, tstg limit 100 20 5.6 4.0 20 0.29 100 5.6 4.3 43 5.5 -5510 + 175 300d 10 1.1 unit v a w/c mj a mj w v/ns c ibf ? in n ? m notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. vdd = 25 v, starting tj = 25 c, l = 4.8 mh, rg = 25 n, ias = 5.6 a (see fig. 12). c. isd < 5.6 a, dl/dt < 75 a/us, vdd < vds, tj < 175 c. d. 1.6 mm from case. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verity that datasheets are current before placing orders. quality semi-conductors
IRF510, sjhf510 thermal resistance ratings parameter maximum junction-to-ambient case-to-sink, flat, greased surface maximum junction-to-case (drain) symbol rthja rthcs rthjc typ. - 0.50 - max. 62 - 3.5 unit c/w specifications (tj = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage vds temperature coefficient gate-source threshold voltage gate-source leakage zero gate voltage drain current drain-source on-state resistance forward transconductance vds avds/tj ves(th) igss idss f^dsfon) 9fs vgs = 0 v, id = 250 |ja reference to 25 c, id = 1 ma vds = vgs, id = 250 ua vgs = 20 v vds = 100v, vgs = ov vds = 80 v, vgs = 0 v, tj = 150 c vgs = 10v id =3.4 ab vds = 50 v, id = 3.4 ab 100 - 2.0 - - - - 1.3 - 0.12 - - - - - - - - 4.0 100 25 250 0.54 - v v/c v na ua u s dynamic input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance cjss c055 crss qg qgs qgd td(on) tr td(off) tf ld ls vgs = 0 v, vds = 25 v, f = 1.0 mhz, see fig. 5 vgs = 10v vdd = 5 rg = 24 n, rd id = 5.6 a, vds = 80v vds = 10v, see fig. 6 and 1 3b 0v, b = 5.6 a = 8.4n, see fig. 10b between lead, ' 6 mm (0.25") from /f'--5\e and center of -vt^ die contact ^~^ - - - - - - - - - - - - 180 81 15 - - - 6.9 16 15 9.4 4.5 7.5 - - - 8.3 2.3 3.8 - - - - - - pf nc ns nh drain-source body diode characteristics continuous source-drain diode current pulsed diode forward current3 body diode voltage body diode reverse recovery time body diode reverse recovery charge forward turn-on time is ism vsd trr qrr ton mosfet symbol showing the s\i integral reverse (] hjjo p - n junction diode xti| tj = 25 c, ls = 5.6 a, vgs = 0 vb t 9^ c* \^ ^ fi a rtl/ht inna/iicb - - - - - - - - 100 0.44 5.6 20 2.5 200 0.88 a v ns uc intrinsic turn-on time is negligible (turn-on is dominated by ls and ld) notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. pulse width < 300 us; duty cycle < 2 %.
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